document number: 84768 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.7, 18-jun-10 1 ambient light sensor tept5600 vishay semiconductors description tept5600 ambient light sensor is a silicon npn epitaxial planar phototransistor in a t-1? package. it is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? high photo sensitivity ? adapted to human eye responsivity ? angle of half sensitivity: ? = 20 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? replacement of cadmium sulfide (cds) photoresistors ? ambient light sensor note test condition see table basic characteristics note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 390 product summary component i pce ( a) ? (deg) 0.5 (nm) tept5600 350 20 440 to 800 ordering information ordering code packaging remarks package form tept5600 bulk moq: 4000 pcs, 4000 pcs/bulk. label with i pce group on each bulk. specifications of group a/b/c/d see table type dedicated characteristics on page 2 t-1? absolute maximum ratings parameter test condition symbol value unit collector emitter voltage v ceo 6v emitter collec tor voltage v eco 1.5 v collector current i c 20 ma power dissi pation t amb 55 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 3 s, 2 mm distance to package t sd 260 c thermal resistance junction/amb ient j-std-051, soldered on pcb r thja 230 k/w
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 84768 2 rev. 1.7, 18-jun-10 tept5600 vishay semiconductors ambient light sensor fig. 1 - power dissipation li mit vs. ambient temperature note t amb = 25 c, unless otherwise specified note each 4000 piece bag will contain a single group. the label on the bag will indicate which binned group is in the bag. a specifi c group cannot be ordered. production shipment s containing multiple bags will likely include multiple groups. please design accordingly. 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 21333 r thja = 230 k/w t am b - am b ient temperat u re (c) p v - po w er dissipation (mw) basic characteristics parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 0.1 ma v ceo 6v collector dark current v ce = 5 v, e = 0 i ceo 350na collector emitte r capacitance v ce = 0 v, f = 1 mhz, e = 0 c ceo 16 pf photo current e v = 20 lx, cie illuminant a, v ce = 5 v i pce 25 226.8 a e v = 100 lx, cie illuminant a, v ce = 5 v i pce 350 a angle of half sensitivity ? 20 deg wavelength of peak sensitivity p 570 nm range of spectral bandwidth 0.5 440 to 800 nm type dedicated characteristics parameter test condition binned group symbol min. max. unit photo current e v = 20 lx, cie illuminant a, v ce = 5 v, t amb = 25 c ai pce 25 50.4 a bi pce 41.7 84 a ci pce 69.4 140 a di pce 113.4 226.8 a
document number: 84768 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.7, 18-jun-10 3 tept5600 ambient light sensor vishay semiconductors basic characteristics t amb = 25 c, unless ot herwise specified fig. 1 - collector dark current vs. ambient temperature fig. 2 - relative photo current vs. ambient temperature fig. 3 - photo current vs . collector emitter voltage fig. 4 - photo current vs. illuminance fig. 5 - collector em itter capacitance vs. co llector emitter voltage fig. 6 - relative spectral sensitivity vs. wavelength 1975 8 100 8 0 60 40 20 0 - 20 - 40 t - am b ient temperat u re (c) am b i - collector dark c u rrent (a) ceo 10 10 -6 -7 10 - 8 10 -9 10 -10 10 -11 10 -12 10 -13 v ce = 5 v 19759 100 8 0 60 40 20 0 - 20 - 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 i pce rel - relati v e photo c u rrent t am b - am b ient temperat u re (c) v ce = 5 v, w hite led 20205 0 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 i pce - photo c u rrent (a) v ce - collector emitter voltage (v) 200 lx 100 lx 50 lx 20 lx 1 2 5 4 3 20204 e v - ill u minance (lx) i pce - photo c u rrent (a) 1000 100 10 10 000 1000 100 10 19762 f = 1 mhz c ce0 - collector emitter capacitance (pf) v ce - collector emitter voltage (v) 25 20 15 10 5 0 0.1 1.0 10.0 20019 0.0 0.1 0.2 0.3 0.4 0.5 300 400 500 600 700 8 00 900 1000 1100 - wa v elength (nm) s( ) rel - relati v e spectral sensiti v ity 0.6 0.7 0. 8 0.9 1.0
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 84768 4 rev. 1.7, 18-jun-10 tept5600 vishay semiconductors ambient light sensor fig. 7 - relative radiant sensitivity vs. angular displacement package dimensions in millimeters 0.4 0.2 0 s - relati v e sensiti v ity rel 94 8 624 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement iss u e:1; 19.06.06 dra w ing- n o.: 6.544-51 8 5.03-4 specifications according to di n technical dra w ings area not plane chip position 0.5 + 0.15 r 2.45 (sphere) 5.75 0.15 7.6 0.15 8 .6 0.3 11. 8 0.3 34. 8 0.5 1.5 0.25 ? 5 0.15 (4.3) < 0.7 0. 8 + 0.2 - 0.1 1 + 0.2 - 0.1 0.63 + 0.2 - 0.1 2.54 nom. ce 219 8 1
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